[IEEE 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) - Nashville, TN, USA (2019.11.3-2019.11.6)] 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) - Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers
- 作者Osrecki, Zeljko; Zilak, Josip; Koricic, Marko; Suligoj, Tomislav
- 文件大小7806.63KB
- 发表时间2019
- DOI10.1109/bcicts45179.2019.8972731
- 页码1-4
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