Novel Reconfigurable Field-Effect Transistor With Asymmetric Spacer Engineering at Drain Side

• 期刊名称IEEE Transactions on Electron Devices
• 作者Yao, Yan; Sun, Yabin; Li, Xiaojin; Shi, Yanling; Liu, Ziyu
• 印刷ISSN0018-9383
• 电子ISSN1557-9646
• 文件大小2208.02KB
• 发表时间2020
• DOI10.1109/TED.2019.2961212
• 页码1-7