Three-state dynamic random-access memory (DRAM)
- 期刊名称IET Circuits, Devices & Systems
- 作者Karmakar, Supriya
- 卷第14卷
- 期第2期
- 印刷ISSN1751-858X
- 电子ISSN1751-8598
- 文件大小1387.54KB
- 发表时间2020-03-01
- DOI10.1049/iet-cds.2019.0117
- 页码176-181
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