发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

Corrections to: “First-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide,”

Corrections to: “First-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide,”

Jaeger, Richard C.; Chen, Jun; Suhling, Jeffrey C.; Fursin, Leonid
  • 期刊名称IEEE Sensors Journal
  • 作者Jaeger, Richard C.; Chen, Jun; Suhling, Jeffrey C.; Fursin, Leonid
  • 印刷ISSN1530-437X
  • 电子ISSN1558-1748
  • 文件大小173.78KB
  • 发表时间2020
  • DOI10.1109/jsen.2020.2982630
  • 页码1-1
← 返回【学霸图书馆】主页