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[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Effects of inserting ultrathin TaO<inf>x</inf> layer in Pt/TiO<inf>2</inf> interface on resistive switching characteristicsWei, Guobin; Murakami, Hideki; Fujioka, Tomohiro; Ohta, Akio; Goto, Yuta; Higashi, Seiichiro; Miyazaki, Seiichi · 2011

Spectral Emissivity of SiliconSatō, Tsutomu · Japanese Journal of Applied Physics · 1967

Surface Acoustic Wave SensorsShiokawa, Showko; Kondoh, Jun · Japanese Journal of Applied Physics · 2004

Perspectives in SonochemistryAndo, Takashi; Kimura, Takahide · Japanese Journal of Applied Physics · 2003

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Peierls Phase TransitionKagoshima, Seiichi · Japanese Journal of Applied Physics · 1981

Piezoelectric Tensor of KNbO <sub/>3</sub>Günter, P. · Japanese Journal of Applied Physics · 1977

Plasma Anodic Oxidation of InPFuyuki, Takashi; Moriuchi, Sohta; Matsunami, Hiroyuki · Japanese Journal of Applied Physics · 1983

Linearity Characteristics of Multiplier PhototubesNonaka, Mamoru; Kashima, Takeo · Japanese Journal of Applied Physics · 1963