Paul und Purifaxby Otto Koischwitz
- 期刊名称The German Quarterly
- 作者Review by: Curtis C. D. Vail
- 卷第13卷
- 期第4期
- 印刷ISSN0016-8831
- 电子ISSN1756-1183
- 文件大小291.36KB
- 发表时间1940-11
- DOI10.2307/400444
- 页码218-219
epitaxial layersMcDevitt, T. L.; Mahajan, S.; Laughlin, D. E.; Bonner, W. A.; Keramidas, V. G. · Physical Review B · 1992
Epitaxial ferromagnetic τ-MnAl films on GaAsSands, T.; Harbison, J. P.; Leadbeater, M. L.; Allen, S. J.; Hull, G. W.; Ramesh, R.; Keramidas, V. G. · Applied Physics Letters · 1990
Vapor Levitation Epitaxy—A New Concept in Crystal GrowthV. G. Keramidas · JOM · 1986
Plasma separation of InGaAsP/InP light-emitting diodesBurton, Randolph H.; Temkin, H.; Keramidas, V. G. · Applied Physics Letters · 1980
Epitaxial growth of GaAs/NiAl/GaAs heterostructuresT. Sands; J. P. Harbison; W. K. Chan; S. A. Schwarz; C. C. Chang; C. J. Palmstro̸m; V. G. Keramidas · 1988
In/GaAs reaction: Effect of an intervening oxide layerDing, J.; Washburn, J.; Sands, T.; Keramidas, V. G. · Applied Physics Letters · 1986
ChemInform Abstract: GALLIUM MIGRATION THROUGH CONTACT METALLIZATIONS ON GAPBRANTLEY, W. A.; SCHWARTZ, B.; KERAMIDAS, V. G.; KAMMLOTT, G. W.; SINHA, A. K. · Chemischer Informationsdienst · 1975
Galvanomagnetic properties of epitaxial MnAl films on GaAsLeadbeater, M. L.; Allen, S. J.; DeRosa, F.; Harbison, J. P.; Sands, T.; Ramesh, R.; Florez, L. T.; Keramidas, V. G. · Journal of Applied Physics · 1991