[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Electrical property of DNA field-effect transistor; Charge retention propertyMaeno, Shoko; Takagi, Shyogo; Matsuo, Naoto; Yamana, Kazushige; Heya, Akira; Takada, Tadao; Yokoyama, Shin · 2012

Spectral Emissivity of SiliconSatō, Tsutomu · Japanese Journal of Applied Physics · 1967

Surface Acoustic Wave SensorsShiokawa, Showko; Kondoh, Jun · Japanese Journal of Applied Physics · 2004

Perspectives in SonochemistryAndo, Takashi; Kimura, Takahide · Japanese Journal of Applied Physics · 2003

Structurally Stable Hyperbolic BeamChakraborty, Rijuparna; Ghosh, Ajay · Japanese Journal of Applied Physics · 2009

Peierls Phase TransitionKagoshima, Seiichi · Japanese Journal of Applied Physics · 1981

Piezoelectric Tensor of KNbO <sub/>3</sub>Günter, P. · Japanese Journal of Applied Physics · 1977

Plasma Anodic Oxidation of InPFuyuki, Takashi; Moriuchi, Sohta; Matsunami, Hiroyuki · Japanese Journal of Applied Physics · 1983

Linearity Characteristics of Multiplier PhototubesNonaka, Mamoru; Kashima, Takeo · Japanese Journal of Applied Physics · 1963