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Direct and indirect carrier capture by semiconductor quantum wellsJ.A. Brum; G. Bastard · 1987
Energy levels in quasi uni-dimensional semiconductor heterostructuresJ.A. Brum; G. Bastard; L.L. Chang; L. Esaki · 1987
Optical properties of one-side modulation-doped quantum wellsJ.A. Brum; J. Orgonasi; G. Bastard; C. Delalande; M. Voos; G. Weimann; W. Schlapp · 1988
Band gap renormalization in a GaAs-Ga1−xAlxAs modulation doped quantum wellC. Delalande; J. Orgonasi; M.H. Meynadier; J.A. Brum; G. Bastard; G. Welmann; W. Schlapp · 1986
Energy levels and magneto-electric subbands in some quasi uni-dimensional semiconductor heterostructuresJ.A. Brum; G. Bastard · 1988
Landau levels and magnetoluminescence of n-type GaAsGa(Al)As modulation doped quantum wellsC. Delalande; J.A. Brum; J. Orgonasi; M.H. Meynadier; G. Bastard; J.C. Maan; G. Weimann; W. Schlapp · 1987
Magnetic field dependence of the energy levels in CdTe-Cd(Mn)Te double quantum well structuresJ.A. Brum; G. Bastard; M. Voos · 1986
Binding Energy of Negatively Charged Exciton in a Semiconductor Quantum Well: The Role of Interface DefectsL.C.O. Dacal; R. Ferreira; G. Bastard; J.A. Brum · 2002