![Impact of titanium addition on film characteristics of HfO[sub 2] gate dielectrics deposited by atomic layer deposition]()
Impact of titanium addition on film characteristics of HfO[sub 2] gate dielectrics deposited by atomic layer depositionTriyoso, D. H.; Hegde, R. I.; Zollner, S.; Ramon, M. E.; Kalpat, S.; Gregory, R.; Wang, X.-D.; Jiang, J.; Raymond, M.; Rai, R.; Werho, D.; Roan, D.; White, B. E.; Tobin, P. J. · Journal of Applied Physics · 2005