Thermal equilibrium process in undoped hydrogenated amorphous silicon and silicon-carbon alloy films
- 期刊名称Applied Physics Letters
- 作者Xu, Xixiang; Morimoto, Akiharu; Kumeda, Minoru; Shimizu, Tatsuo
- 卷第52卷
- 期第8期
- 印刷ISSN0003-6951
- 文件大小581.54KB
- 发表时间1988
- DOI10.1063/1.99384
[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Abatement of hazardous ion implant gases: experimental resultsArno, J.; Boyd, W.; Rendon, M.J.; Romig, T. · 1998
[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Characterization of hazardous gases released during ion implant processesArno, J.; Boyd, W.; Rendon, M.J.; Romig, T. · 1998
[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Pressure based mass flow control for ion implant SDS applicationsBrown, R.L.; Schwartz, J.M. · 1998
[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Thermal based mass flow control for ion implant SDS(R) applicationsKrell, J.; Brown, B. · 1998
[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - The distribution of residual gas in an ion-implant chamberLaFontaine, M.; Tokoro, N. · 1998
[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - High energy, low dose ion implant monitoring using the OMS-3000Dyer, D.E.; Gruhn, T.A.; McMillen, J.A. · 1998
[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Comparison of implant charging results obtained with QUANTOX(R) and CHARM(R)-2Daryanami, S.; Shields, J. · 1998
[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Dopant channeling as a function of implant angle for low energy applicationsWalther, S.R.; Mehta, S.; Weeman, J.; Grouillet, A.; Brown, D. · 1998