![The effect of hydrostatic pressure on a Ga
<sub/>0.47</sub>
In
<sub/>0.53</sub>
As/InP heterojunction with three electric sub-bands]()
The effect of hydrostatic pressure on a Ga
<sub/>0.47</sub>
In
<sub/>0.53</sub>
As/InP heterojunction with three electric sub-bandsGauthier, D; Dmowski, L; Amor, S Ben; Blondel, R; Portal, J C; Razeghi, M; Maurel, P; Omnes, F; Laviron, M · Semiconductor Science and Technology · 1986