Sb/InP(100) interface: A precursor to surfactant-mediated Ge epitaxy
- 期刊名称Physical Review B
- 作者Rioux, Dennis; Höchst, Hartmut
- 卷第46卷
- 期第11期
- 印刷ISSN0163-1829
- 电子ISSN1095-3795
- 文件大小354.75KB
- 发表时间1992-9-15
- DOI10.1103/PhysRevB.46.6857
- 页码6857-6863
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