Al reactions
- 期刊名称Physical Review C
- 作者Kryger, R. A.; Kolata, J. J.; Chung, W.; Dixit, S.; Tighe, R. J.; Vega, J. J.; DeYoung, P. A.; Copi, C.; Sarafa, J.; Gilfoyle, G. P.; Sigworth, S. K.
- 卷第46卷
- 期第5期
- 印刷ISSN0556-2813
- 电子ISSN1089-490X
- 文件大小727.36KB
- 发表时间1992-11-1
- DOI10.1103/PhysRevC.46.1887
- 页码1887-1902
(111) interface by photoemissionHaderbache, L.; Wetzel, P.; Pirri, C.; Peruchetti, J. C.; Bolmont, D.; Gewinner, G. · Physical Review B · 1989
films on Si(111)Haderbache, L.; Wetzel, P.; Pirri, C.; Peruchetti, J. C.; Bolmont, D.; Gewinner, G. · Physical Review B · 1989
upon annealing of Cr overlayers on Si(111)Wetzel, P.; Pirri, C.; Peruchetti, J. C.; Bolmont, D.; Gewinner, G. · Physical Review B · 1987
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Growth of a two-dimensional Er silicide on Si(111)Paki, P.; Kafader, U.; Wetzel, P.; Pirri, C.; Peruchetti, J. C.; Bolmont, D.; Gewinner, G. · Physical Review B · 1992
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Room-temperature growth of Er films on Si(111): A photoelectron spectroscopy investigationWetzel, P.; Haderbache, L.; Pirri, C.; Peruchetti, J. C.; Bolmont, D.; Gewinner, G. · Physical Review B · 1991
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