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DX centre characterization in Se-doped AlGaAs under hydrostatic pressure

DX centre characterization in Se-doped AlGaAs under hydrostatic pressure

Calleja, E; Garcia, F; Romero, A L; Munoz, E; Powell, A L; Rockett, P I; Button, C C; Roberts, J S
  • 期刊名称Semiconductor Science and Technology
  • 作者Calleja, E; Garcia, F; Romero, A L; Munoz, E; Powell, A L; Rockett, P I; Button, C C; Roberts, J S
  • 卷第7卷
  • 期第6期
  • 印刷ISSN0268-1242
  • 电子ISSN1361-6641
  • 文件大小604.23KB
  • 发表时间1992-06-01
  • DOI10.1088/0268-1242/7/6/007
  • 页码758-766
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