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REFLECTANCE ANISOTROPY OF THE GaAs(001) SURFACEMORRIS, S.J.; BASS, J.M.; WESTWOOD, D.I.; WOOLF, D.A.; MATTHAI, C.C.; WILLIAMS, R.H.; REINHARDT, F.; RUMBERG, J.; ROSE, K.C.; RICHTER, W. · Surface Review and Letters · 1994
The electronic structure of Si/Ge superlatticesBass, J M; Matthai, C C · Journal of Physics: Condensed Matter · 1989
A method for determining band offsets in semiconductor superlattices and interfacesBass, J M; Oloumi, M; Matthai, C C · Journal of Physics: Condensed Matter · 1989
Electronic structure of the Si <sub/>6</sub> /Ge <sub/>6</sub> (111) superlattice strained to a Ge substrateBass, J M; Matthai, C C; Milman, V; Payne, M · Semiconductor Science and Technology · 1993
The effect of metal layers on the band offsets at the silicon-germanium interfaceBass, J M; Matthai, C C · Semiconductor Science and Technology · 1991
Thermoelectric transport in topological insulatorsTakahashi, Ryuji; Murakami, Shuichi · Semiconductor Science and Technology · 2012
Quantum dot laserLedentsov, N N · Semiconductor Science and Technology · 2011
Atomic layer depositionGodlewski, Marek · Semiconductor Science and Technology · 2012
Interband tunnelling in semiconductor heterostructuresZakharova, A · Semiconductor Science and Technology · 1998
Special issue on GrapheneMorpurgo, Alberto F; Trauzettel, Björn · Semiconductor Science and Technology · 2010
Optical processes in microcavitiesSlusher, R E · Semiconductor Science and Technology · 1994
Progress in topological insulatorsMorpurgo, Alberto; Trauzettel, Björn · Semiconductor Science and Technology · 2012
Quantum well intermixingMarsh, J H · Semiconductor Science and Technology · 1993