![Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence]()
Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescenceLin, Yue; Zhang, Yong; Liu, Zhiqiang; Su, Liqin; Zhang, Jihong; Wei, Tongbo; Chen, Zhong · Journal of Applied Physics · 2014