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Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Yamaguchi, Shigeo; Kariya, Michihiko; Nitta, Shugo; Takeuchi, Tetsuya; Wetzel, Christian; Amano, Hiroshi; Akasaki, Isamu
  • 期刊名称Journal of Applied Physics
  • 作者Yamaguchi, Shigeo; Kariya, Michihiko; Nitta, Shugo; Takeuchi, Tetsuya; Wetzel, Christian; Amano, Hiroshi; Akasaki, Isamu
  • 卷第85卷
  • 期第11期
  • 印刷ISSN0021-8979
  • 文件大小660.82KB
  • 发表时间1999
  • DOI10.1063/1.370571
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