Modeling Foam Growth in Thermoplastics
- 作者R. J. Koopmans; J. C. F. den Doelder; A. N. Paquet
- 卷第12卷
- 期第23期
- 印刷ISSN0935-9648
- 电子ISSN1521-4095
- 文件大小418.22KB
- 发表时间2000
- DOI10.1002/1521-4095(200012)12:23<1873::aid-adma1873>3.0.co;2-x
- 页码1873-1880
[IEEE 2012 15th International Workshop on Computational Electronics (IWCE) - Madison, WI, USA (2012.05.22-2012.05.25)] 2012 15th International Workshop on Computational Electronics - Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMTPadmanabhan, Balaji; Vasileska, Dragica; Goodnick, Stephen M. · 2012
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ChemInform Abstract: GaN ElectronicsStephen J. Pearton; Fan Ren · 2001
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SiC via holes by laser drillingS. Kim; B. S. Bang; F. Ren; J. D’entremont; W. Blumenfeld; T. Cordock; S. J. Pearton · 2004
GaAs/AlGaAs microdisk lasersU. Mohideen; W. S. Hobson; S. J. Pearton; F. Ren; R. E. Slusher · 1994
Measurement of external stress on bulk GaNJ. Kim; K. Baik; C. Park; S. Cho; S. J. Pearton; F. Ren · 2006
Icp Etching Of SiCWang, J. J.; Lambers, E. S.; Pearton, S. J.; Ostling, M.; Zetterling, C.-M.; Grow, J. M.; Ren, F. · MRS Proceedings · 1997
Proton irradiation effects on Sb-based heterojunction bipolar transistorsC. F. Lo; H. Kim; J. Kim; S. Chen; S. Wang; J. Chyi; B. Y. Chou; K. H. Chen; Y. L. Wang; C. Y. Chang; S. J. Pearton; L. I. Kravchenko; S. Jang; F. Ren · 2009
Wet and Dry Etching of InGaPLothian, J. R.; Kuo, J. M.; Pearton, S. J.; Ren, F. · MRS Proceedings · 1991
UV-photoassisted etching of GaN in KOHHyun Cho; K. H. Auh; J. Han; R. J. Shul; S. M. Donovan; C. R. Abernathy; E. S. Lambers; F. Ren; S. J. Pearton · 1999