Experimental and theoretical research on noise behaviors of epitaxial Si:P blocked-impurity-band detectorsWang, Bingbing; Wang, Xiaodong; Chen, Xiaoyao; Chen, Yulu; Zhou, Deliang; Hou, Liwei; Xie, Wei; Pan, Ming · Optical and Quantum Electronics · 2016

Spectral response characteristics of novel ion-implanted planar GaAs blocked-impurity-band detectors in the terahertz domainWang, Xiaodong; Wang, Bingbing; Chen, Yulu; Hou, Liwei; Xie, Wei; Chen, Xiaoyao; Pan, Ming · Optical and Quantum Electronics · 2016

Design consideration of GaAs-based blocked-impurity-band detector with the absorbing layer formed by ion implantationWang, Xiaodong; Wang, Bingbing; Hou, Liwei; Xie, Wei; Chen, Xiaoyao; Pan, Ming · Optical and Quantum Electronics · 2015

Role of n-type AlGaN layer in photoresponse mechanism for separate absorption and multiplication (SAM) GaN/AlGaN avalanche photodiodeWang, Xiaodong; Chen, Xiaoyao; Hou, Liwei; Wang, Bingbing; Xie, Wei; Pan, Ming · Optical and Quantum Electronics · 2015

Analysis of dark current and spectral response mechanisms for Si-based block-impurity-band detectors operating at terahertz regimeWang, Xiaodong; Wang, Bingbing; Hou, Liwei; Xie, Wei; Chen, Xiaoyao; Pan, Ming · Optical and Quantum Electronics · 2016

Acquisition of optimal operating temperature for epitaxial Si:P blocked-impurity-band detector based on temperature-dependent characteristics investigationWang, Bingbing; Wang, Xiaodong; Chen, Xiaoyao; Hou, Liwei; Xie, Wei; Pan, Ming · Optical and Quantum Electronics · 2016

Study on spectral responsivity characteristics for(hbox {InP/In}_{0.53}hbox {Ga}_{0.47}hbox {As/InP})p-i-n photodiodesWang, Xiaodong; Hou, Liwei; Xie, Wei; Wang, Bingbing; Chen, Xiaoyao; Pan, Ming · Optical and Quantum Electronics · 2015

Roles of blocking layer and anode bias in processes of impurity-band transition and transport for GaAs-based block-impurity-band detectorsWang, Xiaodong; Wang, Bingbing; Chen, Xiaoyao; Chen, Yulu; Hou, Liwei; Xie, Wei; Pan, Ming · Infrared Physics & Technology · 2016