[IEEE kshop on Junction Technology - Osaka, Japan (2005.06.7-2005.06.8)] Extended Abstracts of the Fifth International Workshop on Junction Technology - Properties of ion-implanted strained-Si/SiGe heterostructures
Sugii, N.; Morioka, J.; Ishidoya, Y.; Koyama, K.; Inada, T.
- 作者Sugii, N.; Morioka, J.; Ishidoya, Y.; Koyama, K.; Inada, T.
- 文件大小2444.06KB
- 发表时间2005
- DOI10.1109/iwjt.2005.203866
- 页码11-14