![[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Temperature dependence of TDDB voltage acceleration in high-κ/ SiO<inf>2</inf> bilayers and SiO<inf>2</inf> gate dielectrics]()
[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Temperature dependence of TDDB voltage acceleration in high-κ/ SiO<inf>2</inf> bilayers and SiO<inf>2</inf> gate dielectricsWu, Ernest; Sune, Jordi; LaRow, Charles; Dufresne, Roger · 2012