![Composition dependence of band offsets for (LaAlO[sub 3])[sub 1−x](Al[sub 2]O[sub 3])[sub x] gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy]()
Composition dependence of band offsets for (LaAlO[sub 3])[sub 1−x](Al[sub 2]O[sub 3])[sub x] gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopyYasuhara, R.; Komatsu, M.; Takahashi, H.; Toyoda, S.; Okabayashi, J.; Kumigashira, H.; Oshima, M.; Kukuruznyak, D.; Chikyow, T. · Applied Physics Letters · 2006