[IEEE 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - singapore (2008.07.7-2008.07.11)] 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Reliability of ZrO2 /GeOx Ny stacked high-k dielectrics on Ge under dynamic and pulsed voltage stress
- 作者Mahata, C.; Bera, M. K.; Bose, P.K.; Chakraborty, A.; SenGupta, M.; Maiti, C. K.
- 文件大小315.92KB
- 发表时间2008
- DOI10.1109/ipfa.2008.4588188
- 页码1-4
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