Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
- 作者C. Chang; T. Anderson; J. Hite; L. Lu; C. Lo; B. Chu; D. J. Cheney; E. A. Douglas; B. P. Gila; F. Ren; G. D. Via; P. Whiting; R. Holzworth; K. S. Jones; S. Jang; S. J. Pearton
- 文件大小801.05KB
- 发表时间2010
- DOI10.1116/1.3491038
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[IEEE 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) - Barcelona, Spain (2013.06.16-2013.06.20)] 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) - Keyword index2013
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