The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy
- 作者Jianjun Tang; Ting Liang; Weili Shi; Qianqian Zhang; Yong Wang; Jun Liu; Jijun Xiong
- 卷第257卷
- 期第21期
- 印刷ISSN0169-4332
- 文件大小611.92KB
- 发表时间2011
- DOI10.1016/j.apsusc.2011.04.082
- 页码8846-8849
同标题推荐
Interfacial reactions and electrical characteristics in Ti/SiGe/Si(100) contact systemsJ. Kojima; S. Zaima; H. Shinoda; H. Iwano; H. Ikeda; Y. Yasuda · 1997
The interfacial reaction and electrical characteristics of molybdenum-n-GaAs contactsC. Y. Nee; C. Y. Chang; T. F. Cheng; T. S. Huang · 1988
Interfacial solid-phase reactions, crystallographic structures, and electrical characteristics of Hf/(001)Si systemsS. Zaima; N. Wakai; T. Yamauchi; Y. Yasuda · 1993
Electrical characteristics and interfacial reactions of rapidly annealed Pt/Ru Schottky contacts on n-type GaNN. Nanda Kumar Reddy; V. Rajagopal Reddy; C.-J. Choi · 2011