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[IEEE 2012 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) - Tunis, Tunisia (2012.05.16-2012.05.18)] 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era - Failure analysis of hot-electron effect on power RF N-LDMOS transistors

[IEEE 2012 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) - Tunis, Tunisia (2012.05.16-2012.05.18)] 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era - Failure analysis of hot-electron effect on power RF N-LDMOS transistors

Belaid, M. A.; Gares, M.; Daoud, K.; Eudeline, Ph.
  • 作者Belaid, M. A.; Gares, M.; Daoud, K.; Eudeline, Ph.
  • 文件大小423.62KB
  • 发表时间2012
  • DOI10.1109/dtis.2012.6232981
  • 页码1-6
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