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$Electrical Instabilities in Amorphous InGaZnO Thin Film Transistors with Si$_{3}$N$_{4}$ and Si$_{3}$N$_{4}$/Al$_{2}$O$_{3}$ Gate Dielectrics$

Electrical Instabilities in Amorphous InGaZnO Thin Film Transistors with Si$_{3}$N$_{4}$ and Si$_{3}$N$_{4}$/Al$_{2}$O$_{3}$ Gate Dielectrics

Kim, Yu-Mi; Jeong, Kwang-Seok; Yun, Ho-Jin; Yang, Seung-Dong; Lee, Sang-Youl; Lee, Hi-Deok; Lee, Ga-Won

期刊名称Japanese Journal of Applied Physics
作者Kim, Yu-Mi; Jeong, Kwang-Seok; Yun, Ho-Jin; Yang, Seung-Dong; Lee, Sang-Youl; Lee, Hi-Deok; Lee, Ga-Won
卷第51卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小332.28KB
发表时间2012-9-20
DOI10.1143/JJAP.51.09MF10

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