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Impact of Oxide Thickness on Gate Capacitance—A Comprehensive Analysis on MOSFET, Nanowire FET, and CNTFET Devices

Impact of Oxide Thickness on Gate Capacitance—A Comprehensive Analysis on MOSFET, Nanowire FET, and CNTFET Devices

Sinha, Sanjeet Kumar; Chaudhury, Saurabh
  • 期刊名称IEEE Transactions on Nanotechnology
  • 作者Sinha, Sanjeet Kumar; Chaudhury, Saurabh
  • 卷第12卷
  • 期第6期
  • 印刷ISSN1536-125X
  • 电子ISSN1941-0085
  • 文件大小573.38KB
  • 发表时间2013-11
  • DOI10.1109/TNANO.2013.2278021
  • 页码958-964
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