Innovation: top down or bottom up
- 期刊名称IEEE Engineering Management Review
- 作者Gaynor, G. H.
- 卷第41卷
- 期第3期
- 印刷ISSN0360-8581
- 文件大小97.67KB
- 发表时间2013-23
- DOI10.1109/emr.2013.2274676
- 页码5-6
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Magnetoelectronic devicesDe Boeck, J.; Borghs, G. · 1999
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Issues in modeling small devicesLaux, S.E.; Fischetti, M.V. · 1999
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Single electron and few electron memory cellsAhmed, H. · 1999
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Toward scientific manufacturingTsujide, T. · 1999
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Consumer electronics as silicon engineKramer, R. · 1999
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Si complementary single-electron inverterOno, Y.; Takahashi, Y.; Yamazaki, K.; Nagase, M.; Namatsu, H.; Kurihara, K.; Murase, K. · 1999
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Current and future development of high power MOS devicesOhashi, H. · 1999
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - A comprehensive MOSFET mismatch modelDrennan, P.G.; McAndrew, C.C. · 1999