![Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter]()
Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitterJalali, B.; King, C. A.; Higashi, G. S.; Bean, J. C.; Hull, R.; Hsieh, Y.-F.; Macaulay, J.; Poate, J. M. · Applied Physics Letters · 1991