Fabrication and characterization of metal–semiconductor–metal photodetector based on porous InGaN
- 期刊名称Materials Chemistry and Physics
- 作者Abud, Saleh H.; Hassan, Z.; Yam, F.K.
- 卷第144卷
- 印刷ISSN0254-0584
- 文件大小1522.99KB
- 发表时间2014-03
- DOI10.1016/j.matchemphys.2013.12.018
- 页码86-91
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Editorial BoardMaterials Chemistry and Physics · 2014
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Editorial BoardMaterials Chemistry and Physics · 2014
ContentsMaterials Chemistry and Physics · 2013
Editorial BoardMaterials Chemistry and Physics · 2014
ContentsMaterials Chemistry and Physics · 2013
ContentsMaterials Chemistry and Physics · 2013
ContentsMaterials Chemistry and Physics · 2013