![Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)$_{4}$Ti$_{3}$O$_{12}$/Pb(Zr,Ti)O$_{3}$ Stacked Gate Insulator]()
Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)$_{4}$Ti$_{3}$O$_{12}$/Pb(Zr,Ti)O$_{3}$ Stacked Gate InsulatorThanh, Pham Van; Trinh, Bui Nguyen Quoc; Miyasako, Takaaki; Tue, Phan Trong; Tokumitsu, Eisuke; Shimoda, Tatsuya · Japanese Journal of Applied Physics · 2012