1.3-/spl mu/m InAs quantum-dot laser with high dot density and high uniformityAmano, T.; Sugaya, T.; Komori, K. · 2006

Control of subband energy levels of quantum dots using InGaAs gradient composition strain-reducing layerAmano, T.; Yamauchi, S.; Sugaya, T.; Komori, K. · Applied Physics Letters · 2006

[IEEE CLEO 2007 - Baltimore, MD, USA (2007.5.6-2007.5.11)] 2007 Conference on Lasers and Electro-Optics (CLEO) - Sub-band energy level controlling of QDs using InGaAs Gradient Composition strain-reducing layerAmano, T.; Yamauchi, S.; Sugaya, T.; Komori, K. · 2007

[IEEE 2008 IEEE 21st International Semiconductor Laser Conference (ISLC) - Sorrento, Italy (2008.09.14-2008.09.18)] 2008 IEEE 21st International Semiconductor Laser Conference - 1.3-μm quantum dot DFB laser with Half-Etching Mesa and high density QDAmano, T.; Goshima, K.; Sugaya, T.; Komori, K. · 2008

[IEEE 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. - Kohala Coast, HI, USA ()] 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest. - Characteristics of 1.3-¿m Quantum Dots Laser with a High Density and a High Uniformity QDAmano, T.; Sugaya, T.; Komori, K. · 2006

[IEEE International Conference on Indium Phosphide and Related Materials, 2005. - Glasgow, Scotland (May 8-12, 2005)] International Conference on Indium Phosphide and Related Materials, 2005. - Highest density 1.3 μm InAs quantum dots covered with gradient composition InGaAs SRL grown with an As/sub 2/ source using molecular beam epitaxyAmano, T.; Sugaya, T.; Komori, K. · 2005

[IEEE 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference - Long Beach, CA, USA (2006.05.21-2006.05.26)] 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference - 1.3 μm InAs quantum dots with high density, uniformity, and qualityAmano, T.; Sugaya, T.; Yamauchi, S.; Komori, K. · 2006