π-Phase Tin and Germanium Monochalcogenide Semiconductors: An Emerging Materials System
- 期刊名称Advanced Materials
- 作者Abutbul, Ran Eitan; Segev, Elad; Argaman, Uri; Makov, Guy; Golan, Yuval
- 印刷ISSN0935-9648
- 文件大小6228.73KB
- 发表时间2018-06-26
- DOI10.1002/adma.201706285
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