![Correction to “Trench Termination With SiO
<sub/>2</sub>
-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices” [Dec 18 1900-1903]]()
Correction to “Trench Termination With SiO
<sub/>2</sub>
-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices” [Dec 18 1900-1903]Wang, Hengyu; Wang, Jue; Liu, Li; Li, Yucen; Wang, Baozhu; Xu, Hongyi; Yang, Shu; Sheng, Kuang · IEEE Electron Device Letters · 2019