Alan A. Berryman (1937–2018)
- 期刊名称American Entomologist
- 作者Brown, John J; Long, Garrell E; Miller, Ross; Raffa, Ken
- 卷第65卷
- 期第2期
- 印刷ISSN1046-2821
- 电子ISSN2155-9902
- 文件大小308.22KB
- 发表时间2019-06-07
- DOI10.1093/ae/tmz030
- 页码140-140
Effect of Thermally Nitrided SiO[sub 2] (Nitroxide) on MOS CharacteristicsIto, T. · Journal of The Electrochemical Society · 1982
Hydrogen Gettering Effect of Mo[sub 2]N∕Mo MOS ProcessKim, M. J. · Journal of The Electrochemical Society · 1983
High pressure effect on structure, electronic structure, and thermoelectric properties of MoS[sub 2]Guo, Huaihong; Yang, Teng; Tao, Peng; Wang, Yong; Zhang, Zhidong · Journal of Applied Physics · 2013
AIP Conference Proceedings [AIP THE 4TH NANOSCIENCE AND NANOTECHNOLOGY SYMPOSIUM (NNS2011): An International Symposium - Bali, (Indonesia) (23–25 September 2011)] - An Analysis of Electron Direct Tunneling Current through a High-K MOS Capacitor by Including the Effect of a Trap between HfO[sub 2] and SiO[sub 2] InterfacesSahdan, Muhammad F.; Achmari, Panji; Noor, Fatimah A.; Iskandar, Ferry; Abdullah, Mikrajuddin; Iskandar, Ferry; Abdullah, Mikrajuddin · 2011
[IEEE Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004. - Toulouse, France (July 5-9, 2004)] Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004. - The effect of gate material on dielectric characteristics and conduction mechanism of Ta/sub 2/O/sub 5/ MOS structuresPecovska-Gjorgievich, M.; Novkovski, N.; Atanassova, E.; Spasov, D. · 2004
[IEEE 2019 Silicon Nanoelectronics Workshop (SNW) - Kyoto, Japan (2019.6.9-2019.6.10)] 2019 Silicon Nanoelectronics Workshop (SNW) - Atomistic Study of Transport Characteristics in Sub-1nm Ultra-narrow Molybdenum Disulfide (MoS <sub/>2</sub> ) Nanoribbon Field Effect TransistorsWang, Fei; Ma, Xiaolei; Wu, Jixuan; Chen, Jiezhi; Jiang, Xiangwei · 2019
AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - Observation of localized states in atomically thin MoS[sub 2] field effect transistorGhatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam · 2013
[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Sub-60 mV/dec ferroelectric HZO MoS<inf>2</inf> negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitanceSi, M.; Jiang, C.; Su, C.-J.; Tang, Y.-T.; Yang, L.; Chung, W.; Alam, M. A.; Ye, P. D. · 2017
Welcome to <i>Materials Research Express</i>Meyyappan, Meyya · Materials Research Express · 2013
Chemical scissors cut phosphorene nanostructuresPeng, Xihong; Wei, Qun · Materials Research Express · 2014
Investigations on pseudogap semimetal CoSiShanmukharao Samatham, S; Venkateshwarlu, D; Ganesan, V · Materials Research Express · 2014
Anomalous temperature behavior of BaBiO <sub/>3</sub>Adhikary, Ganesh; Singh, Navneet; Radhamany, Bindu · Materials Research Express · 2015
Computational characterization of ordered nanostructured surfacesAbukhdeir, Nasser Mohieddin · Materials Research Express · 2016
Flash sintering of ceramic materialsDancer, C E J · Materials Research Express · 2016
Dynamic nuclear polarization in diamondNah, Seungjoo · Materials Research Express · 2016
Nanolubricant: magnetic nanoparticle basedTrivedi, Kinjal; Parekh, Kinnari; Upadhyay, Ramesh V · Materials Research Express · 2017