![Comparison of electron transmittances and tunneling currents in an anisotropic TiN
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Comparison of electron transmittances and tunneling currents in an anisotropic TiN
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/p-Si(100) metal—oxide—semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix methodNoor, Fatimah A; Abdullah, Mikrajuddin; Sukirno, ; Khairurrijal, · Journal of Semiconductors · 2010