[Widerkehr and Associates 2004 Symposium on VLSI Circuits. Digest of Technical Papers - Honolulu, HI, USA (17-19 June 2004)] 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525) - Power analysis for high-speed I/O transmittersHatamkhani, H.; Chih-Kong Ken Yang, · 2004

[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Development of highly robust nano-mixed Hf/sub x/Al/sub y/O/sub z/ dielectrics for TiN/Hf/sub x/Al/sub y/O/sub z//TiN capacitor applicable to 65nm generation DRAMsDeok-Sin Kil, ; Kwon Hong, ; Kee-Jeung Lee, ; Joosung Kim, ; Han-Sang Song, ; Ki-Seon Park, ; Jae-Sung Roh, ; Hyun-Chul Sohn, ; Jin-Woong Kim, ; Sung-Wook Park, · 2004

[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - High quality high-k MIM capacitor by Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/ multi-layered dielectric and NH/sub 3/ plasma interface treatments for mixed-signal/RF applicationsYong-kuk Jeong, ; Seok-jun Won, ; Dae-jin Kwon, ; Min-woo Song, ; Weon-hong Kim, ; Moon-han Park, ; Joo-hyun Jeong, ; Han-su Oh, ; Ho-kyu Kang, ; Kwang-pyuk Suh, · 2004

[Widerkehr and Associates 2004 Symposium on VLSI Circuits. Digest of Technical Papers - Honolulu, HI, USA (17-19 June 2004)] 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525) - Receiver adaptation and system characterization of an 8Gbps source-synchronous I/O link using on-die circuits in 0.13 μm CMOSBalamurugan, G.; Jaussi, J.; Johnson, D.R.; Casper, B.; Martin, A.; Kennedy, J.; Mooney, R.; Shanbhag, N. · 2004

High-speed source-heterojunction-MOS-transistor (SHOT) utilizing high-velocity electron injectionMizuno, T.; Sugiyama, N.; Tezuka, T.; Moriyama, Y.; Nakaharai, S.; Maeda, T.; Takagi, S. · 2005

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Physical mechanism for high hole mobility in [110]-surface strained- and unstrained-MOSFETsMizuno, T.; Sugiyama, N.; Tezuka, T.; Moriyama, Y.; Nakaharai, S.; Maeda, T.; Takagi, S. · 2003

[IEEE 2006 International Symposium on VLSI Technology, Systems, and Applications - Hsinchu, Taiwan (2006.4.24-2006.4.24)] 2006 International Symposium on VLSI Technology, Systems, and Applications - Strained-SOI Technology for High-Speed CMOS OperationMizuno, T.; Sugiyama, N.; Tezuka, T.; Moriyama, Y.; Nakaharai, S.; Maeda, T.; Takagi, S. · 2006

[IEEE 2004 International Conference on Microelectronic Test Structures - Awaji Yumebutai, Japan (22-25 March 2004)] Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516) - Device characterizations and physical models of strained-Si channel CMOSMaeda, T.; Numata, T.; Mizuno, T.; Usuda, K.; Tanabe, A.; Tezuka, T.; Nakaharai, S.; Koga, J.; Irisawa, T.; Moriyama, Y.; Hirashita, N.; Sugiyama, N.; Takagi, S. · 2004