Factor in Metallic Zn
- 期刊名称Physical Review
- 作者O'Sullivan, W. J.; Schirber, J. E.
- 卷第162卷
- 期第3期
- 印刷ISSN0031-899X
- 文件大小1776.73KB
- 发表时间1967-10-15
- DOI10.1103/physrev.162.519
- 页码519-527
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Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors(Donald) Cheng, K. Y.; Xu, H.; Stuenkel, M. E.; Iverson, E. W.; Liao, C. C.; Yang, K. W.; Feng, M.; (Norman) Cheng, K. Y. · Journal of Applied Physics · 2011
Au - (n-type) InP Schottky barriers and their use in determining majority carrier concentrations in n-type InPSmith, B L · Journal of Physics D: Applied Physics · 1973
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Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowiresPal, B.; Goto, K.; Ikezawa, M.; Masumoto, Y.; Mohan, P.; Motohisa, J.; Fukui, T. · Applied Physics Letters · 2008
Dopant-Type Selective Electroless Photoetching of Zn-Diffused InP and InGaAs∕InP HeterostructuresWilliamson, J. B. · Journal of The Electrochemical Society · 1993
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The Treatment of Anal Fistula: ACPGBI Position StatementJ. G. Williams; P. A. Farrands; A. B. Williams; B. A. Taylor; P. J. Lunniss; P. M. Sagar; J. S. Varma; B. D. George · 2007
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