![[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS]()
[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOSKun Mao, ; Ming Qiao, ; Lingli Jiang, ; Huaping Jiang, ; Zehong Li, ; Weizhong Chen, ; Zhaoji Li, ; Bo Zhang, · 2013