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LPE Growth and Pulsed Room Temperature Laser Operation of In
<sub/>
1-
<i>x</i>
</sub>
Ga
<sub/><i>x</i>
</sub>
As
<sub/><i>z</i>
</sub>
P
<sub/>
1-
<i>z</i>
</sub>
on (100) GaAs
<sub/>
1-
<i>y</i>
</sub>
P
<sub/><i>y</i>
</sub>
($y{cong}0.39$)

LPE Growth and Pulsed Room Temperature Laser Operation of In _{1-
x} Ga _x As _z P _{1-
z} on (100) GaAs _{1-
y} P _y ($y{cong}0.39$)

Shimura, Mikihiko; Fujimoto, Akira; Yasuda, Hirohiko; Yamashita, Shigeaki

期刊名称Japanese Journal of Applied Physics
作者Shimura, Mikihiko; Fujimoto, Akira; Yasuda, Hirohiko; Yamashita, Shigeaki
卷第21卷
印刷ISSN0021-4922
文件大小337.12KB
发表时间1982-6-20
DOI10.1143/JJAP.21.L338

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