Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method
- 期刊名称Japanese Journal of Applied Physics
- 作者Hoshikawa, Keigo; Kohda, Hiroki; Hirata, Hiroshi
- 卷第23卷
- 印刷ISSN0021-4922
- 文件大小509.13KB
- 发表时间1984-1-20
- DOI10.1143/JJAP.23.L37
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