![[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD]()
[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVDVan Elshocht, S.; Brijs, B.; Caymax, M.; Conard, T.; De Gendt, S.; Kubicek, S.; Meuris, M.; Onsia, B.; Richard, O.; Teerlinck, I.; Van Steenbergen, J.; Zhao, C.; Heyns, M. · 2003