![[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Robust, 1000 V, 130 mΩ-cm/sup 2/, lateral, two-zone RESURF MOSFETs in 6H-SiC]()
[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Robust, 1000 V, 130 mΩ-cm/sup 2/, lateral, two-zone RESURF MOSFETs in 6H-SiCBanerjee, S.; Chow, T.P.; Gutmann, R.J. · 2000