Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs
- 作者Naoki Kobayashi; Toshiki Makimoto
- 印刷ISSN0169-4332
- 文件大小437.36KB
- 发表时间1994
- DOI10.1016/0169-4332(94)90229-1
- 页码284-289
Flow-Rate Modulation Epitaxy of GaAsKobayashi, Naoki; Makimoto, Toshiki; Horikoshi, Yoshiji · Japanese Journal of Applied Physics · 1985
MOVPE growth of strained InGaAsN/GaAs quantum wellsHisao Saito; Toshiki Makimoto; Naoki Kobayashi · 1998
Electron conduction in GaAs atomic layer doped with SiMakimoto, Toshiki; Kobayashi, Naoki; Horikoshi, Yoshiji · Journal of Applied Physics · 1988
Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAsKobayashi, Naoki; Makimoto, Toshiki · Japanese Journal of Applied Physics · 1985
Flow-rate modulation epitaxy of GaAs and AlGaAsKobayashi, Naoki; Makimoto, Toshiki; Yamauchi, Yoshiharu; Horikoshi, Yoshiji · Journal of Applied Physics · 1989
Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAsMakimoto, Toshiki; Kobayashi, Naoki · Applied Physics Letters · 1995
Nitridation of GaAs surfaces using nitrogen through a hot tungsten filamentMakimoto, Toshiki; Kobayashi, Naoki · Applied Physics Letters · 1995