Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs
- 期刊名称Applied Physics Letters
- 作者Makimoto, Toshiki; Kobayashi, Naoki
- 卷第67卷
- 期第5期
- 印刷ISSN0003-6951
- 文件大小244.55KB
- 发表时间1995
- DOI10.1063/1.115204
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Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAsNaoki Kobayashi; Toshiki Makimoto · 1994
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