![Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon–germanium films on SiO[sub 2] using Si[sub 2]H[sub 6], GeH[sub 4], and B[sub 2]H[sub 6] gases]()
Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon–germanium films on SiO[sub 2] using Si[sub 2]H[sub 6], GeH[sub 4], and B[sub 2]H[sub 6] gasesLi, V. Z-Q; Mirabedini, M. R.; Hornung, B. E.; Heinisch, H. H.; Xu, M.; Batchelor, D.; Maher, D. M.; Wortman, J. J.; Kuehn, R. T. · Journal of Applied Physics · 1998