A new analytical model for optimizing SOI LDMOS with step doped drift region
- 作者Yufeng Guo; Zhaoji Li; Bo Zhang
- 卷第37卷
- 期第9期
- 印刷ISSN0026-2692
- 文件大小237.94KB
- 发表时间2006
- DOI10.1016/j.mejo.2006.03.004
- 页码861-866
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