InAs∕AlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications
- 作者M. D. Lange; R. S. Tsai; W. R. Deal; P. S. Nam; L. J. Lee; R. S. Sandhu; R. Hsing; B. D. Poust; J. L. Kraus; A. L. Gutierrez-aitken; B. R. Bennett; J. B. Boos; A. M. Noori; S. L. Hayashi; M. S. Goorsky
- 文件大小730.16KB
- 发表时间2006
- DOI10.1116/1.2362758
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