![Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes]()
Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodesOng, D. S.; Li, K. F.; Plimmer, S. A.; Rees, G. J.; David, J. P. R.; Robson, P. N. · Journal of Applied Physics · 2000